年度 2006
論文名稱 C. Meng, J. W. Chen, J. H. Chang, L. P. Chen, H. Y. Lee and J. F. Kuan, "Using average RF gate and drain current to determine gain compression mechanism for narrow-recessed and wide-recessed MESFETs", European gallium arsenide and other semiconductors application symposium (GAAS 2000), p338-341. NSC 89-2213-E-005-019, 2000年10月
發表日期 2006-02-03