年度 2011
論文名稱

M. Mizukami, K. Nishihara, H. Ishida, F. Aiso, T. Iguchi, D. Ichinose, A. Fukumoto, N. Aoki, M. Kondo, T. Izumida, H. Tanimoto, T. Enda, H. Watanabe, S. Toriyama, T. Suzuki1, I. Mizushima, and F. Arai, “Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory”, Jpn. J. Appl. Phys. 49 (2010) 04DD09 (4 pages).
 

發表日期 2011-06-02