Year 2011
Paper Title

M. Mizukami, K. Nishihara, H. Ishida, F. Aiso, T. Iguchi, D. Ichinose, A. Fukumoto, N. Aoki, M. Kondo, T. Izumida, H. Tanimoto, T. Enda, H. Watanabe, S. Toriyama, T. Suzuki1, I. Mizushima, and F. Arai, “Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory”, Jpn. J. Appl. Phys. 49 (2010) 04DD09 (4 pages).
 

Date of Publication 2011-06-02