年度 2011
论文名称

M. Mizukami, K. Nishihara, H. Ishida, F. Aiso, T. Iguchi, D. Ichinose, A. Fukumoto, N. Aoki, M. Kondo, T. Izumida, H. Tanimoto, T. Enda, H. Watanabe, S. Toriyama, T. Suzuki1, I. Mizushima, and F. Arai, “Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory”, Jpn. J. Appl. Phys. 49 (2010) 04DD09 (4 pages).
 

发表日期 2011-06-02