年度 2009
論文名稱 Todd G. MCKenzie and Yiming Li, "A Drain-Current Model for DG PMOSFETs with Fabricated 35nm Device Comparison" , International Journal of Computational Science and Engineering, Vol. 2, No. 3-4, Nov. 2006, pp. 144-147 (EI期刊), 2006年11月
發表日期 2009-03-31