渡邊浩志
教授
職稱 教授
姓名 渡邊浩志
聯絡電話 03-5712121 ext59416
電子郵件 hwhpnabe@mail.nctu.edu.tw
教授簡介 He has been studying fundamental physics related and not limited to electron devices more than 23 years, and developing advanced TCAD and High density Non-volatile semiconductor memory more than 18 years. Especially, he was one of main member of the NAND-Flash memory developing and advanced TCAD in Toshiba Corporation.His main research areas are 1) the design of memory cell, 2) reliability modeling based on the semiconductor physics and 3) total memory system.
研究專長 理論物理 奈米元件 元件模擬
0
年度 論文名稱
2011 (Approved) Hagishima, H. Watanabe, P2006265985(Date: 20060928), Japan
2011 H. Watanabe, T. Ushijima, N. Hagiwara, C. Okada, Tanaba, "Integrated Batteryless Electron Timer", 58, No. 3, 2011, 792-797.
2011 H. Watanabe, "Quantitative Discussion Electron-hole Tunnel Mass Ultrathin Dielectric Oxide Oxide-Nitride", Transactions ElectroChemical Society, ECST-35(4), 303-320, 2011.
2011 H. Kawabata, T. Ichikawa, A tight-binding method study optimized Si-SiO2 system§, 11, 3084-3091, 2010
2011

M. Mizukami, K. Nishihara, H. Ishida, F. Aiso, T. Iguchi, D. Ichinose, A. Fukumoto, N. Aoki, M. Kondo, T. Izumida, H. Tanimoto, T. Enda, H. Watanabe, S. Toriyama, T. Suzuki1, I. Mizushima, and F. Arai, “Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory”, Jpn. J. Appl. Phys. 49 (2010) 04DD09 (4 pages).
 

2010 H. Watanabe, K. Kawabata, T. Ichikawa, “A tight-binding method study of optimized Si-SiO2 system”, IEEE Trans. Elec. Dev. Vol. 57, no. 11, 3084-3091, 2010.' target='_blank'>H. Watanabe, K. Kawabata, T. Ichikawa, “A tight-binding method study of optimized Si-SiO2 system”, IEEE Trans. Elec. Dev. Vol. 57, no. 11, 3084-3091, 2010.
2010 , “Transient device simulation of floating gate non-volatile memory cell with a local trap”, IEEE Trans. Elec. Dev. Vol. 57, no. 8, pp. 1873-1882, 2010.' target='_blank'>H. Watanabe, “Transient device simulation of floating gate non-volatile memory cell with a local trap”, IEEE Trans. Elec. Dev. Vol. 57, no. 8, pp. 1873-1882, 2010.
2010
 H. Watanabe, D. Matsushita, K. Muraoka, and K. Kato, “Universal tunnel mass and charge trapping in [(SiO2)1-x(Si3N4)x]1-ySiy film”, IEEE Trans. Elec. Dev., vol. 57, no. 5, pp. 1129-1136, 2010.
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 H. Watanabe, D. Matsushita, K. Muraoka, and K. Kato, “Universal tunnel mass and charge trapping in [(SiO2)1-x(Si3N4)x]1-ySiy film”, IEEE Trans. Elec. Dev., vol. 57, no. 5, pp. 1129-1136, 2010.
2010
H. Watanabe, S. Takagi, “Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current”, J. Appl. Phys. Vol. 90, no. 3, pp. 1600-1607, 2001.
2010
H. Watanabe, K. Matsuzawa, S. Takagi, “Scaling effect on gate leakage current”, IEEE Trans. Elec. Dev. Vol. 50, no. 8, pp. 1779-1784, 2003.
2010
H. Watanabe, T. Ishihara, Y. Matsunaga, K. Matsuzawa, D. Matsushita, K. Muraoka, “Numerical study of data retention due to direct tunneling for nonvolatile memory cell”, IEEE Trans. Elect. Dev. Vol. 52, no. 5, pp. 955-961, 2005.
2010
H. Watanabe, “Depletion layer of gate poly-Si”, IEEE Trans. Elec. Dev. Vol. 52, no. 10, pp. 2265-2271, 2005.
2010
K. Hisatake, I matsubara, K. Maeda, T. Miyazaki, S. Kainuma, H. Watanabe, “Model of photoinduced disaccommodation in oxygen-deficient Yttrium Iron Garnet”, J. Mag. Soc. Jpn., vol. 23, no. 1-2, pp. 376-378, 1999.
2010
H. Watanabe, “Hidden order and symmetry breaking in the ground state of a spin-1/2 antiferromagnetic Heisenberg ladder”, Phys. Rev. B, vol. 52, no. 17, pp. 12508-12511, 1995.
2010
H. Watanabe, “Numerical diagonalization study of an S=1/2 ladder model with open boundary conditions”, Phys. Rev. B, vol. 50, no. 18, pp. 13442-13448, 1994.
2010
H. Watanabe, K. Nomura, S. Takada, “S=1/2 quantum Heisenberg ladder and S=1 Haldane phase”, J. Phys. Soc. Jpn, vol. 62, no. 8, pp. 2845-2860, 1993.
2010
S. Takada, H. Watanabe, “Nonlocal unitary transformation and Haldane state in S=1/2 antiferromagnetic ladder model”, J. Phys. Soc. Jpn, vol. 61, no. 1, pp. 39-42, 1992.
2010
H. Watanabe, D. Matsushita, K. Muraoka, “Determination of tunnel mass and physical thickness of gate oxide including poly-Si/SiO2 and Si/SiO2 interfacial transition layers”, IEEE Trans. Elec. Dev. Vol. 53, no. 6, pp. 1323-1330, 2006.
2010
H. Watanabe, K. Uchida, A. Kinoshita, “Numerical study of CV characteristics of double-gate ultrathin SOI MOSFETs”, IEEE Trans. Elec. Dev. Vol. 54, no. 1, pp. 52-58, 2007.
2010
H. Watanabe, “Statistics of grain boundaries in polysilicon”, IEEE Trans. Elec. Dev. Vol. 54, no. 10, pp. 38-44, 2007.
年度 論文名稱
2011
                International Conference/Meeting (Peer Reviewed)
1.1         H. Watanabe, K. Matsuzawa, S. Takagi, “Impact of two-dimensional structure of nMOSFETs on direct tunnel gate current”, Extended abstracts of the 2001, international conference on solid state devices and materials (SSDM), Tokyo, 2001, pp. 142-143
1.2         K. Uchida, H. Watanabe, A. Kinoshita, J. Koga, T. Numata, S. Takagi, “Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5nm”, IEDM Tech. Dig., 2002, pp. 47-50
1.3         H. Watanabe, K. Matsuzawa, S. Takagi, “Importance of exact modeling for degenerated poly-Si of MOSFETs with ultra-thin oxide”, Extended abstracts of the 2002 international conference on solid state devices and materials (SSDM), Nagoya, 2002, pp. 410-411
1.4         H. Watanabe, K. Uchida, A. Kinoshita, “Quantum confinement effect of ultrathin-SOI on double-gate nMOSFETs”, Extended abstracts of the 2003 international conference on solid state devices and materials (SSDM), Tokyo, 2003, pp. 270-271
1.5         H. Watanabe, D. Matsushita, K. Muraoka, “Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO2 and Si/SiO2 interfacial transition layers”, Extended abstracts of the 2004 international conference on solid state devices and materials (SSDM), Tokyo, 2004, pp. 732-733
1.6         H. Watanabe, D. Matsushita, K. Muraoka, “Impact of interfacial transition layers between Si and SiO2 and between poly-Si and SiO2 on electrical characteristics”, The 10-th meeting of gate stack, Mishima, 2005, pp. 243-248
1.7         H. Watanabe, K. Nakajima, K. Matsuo, T. Saito, T. Kobayashi, “Reduction of accumulation thickness in metal gate”, Extended abstracts of the 2005 international conference on solid state devices and materials (SSDM), Kobe, 2005, pp. 504-505
1.8         H. Watanabe, “Statistics of Grain Boundaries in Gate Poly-Si”, Proc. simulation of semiconductor process and devices (SISPAD), 2005, pp. 39-42
1.9         H. Watanabe, D. Matsushita, K. Muraoka, K. Kato, “Leakage mechanism of ultrathin SiON gate dielectric”, Extended abstracts of the 2006 international conference on solid state devices and materials, Yokohama, 2006, pp. 1126-1127
1.10      H. Watanabe, K. Matsuo, T. Kobayashi, K. Nakajima, T. Saito, “Weak accumulation of gate polysilicon”, Proceedings of the 11th international workshop on computational electronics (IWCE-11), Technical University of Vienna, May 25-27, 2006, pp. 89-90
1.11      H. Watanabe, “Hopping transport of electrons via Si-dot”, Proceedings of simulation of semiconductor process and devices (SISPAD). Vol. 12, Edited by T. Grasser and S. Selberherr, 2007, pp. 249-252
1.12      H. Watanabe, “Transient device simulation of trap-assisted leakage in non-volatile memory cell”, SISPAD08, Hakone, September 9, 2008.
1.13      H. Watanabe, K. Kawabata, T. Ichikawa, “Trial application of tight-binding method to Si-cluster in optimized SiO2-network”, SISPAD09, San Diego, September 9-11, 2009.
1.14      C-H. Yu, Ming-Hung Han, H-W. Cheng, Z-C. Su, Y. Li, H. Watanabe, “Statistical Simulation of Metal-Gate Work-Function Fluctuation in Emerging High-K/Metal-Gate CMOS Devices”, SISPAD2010, Bologna, September 6-8, 2010, pp. 153-156.
1.15      (Invited) H. Watanabe, “Quantitative discussion electron-hole universal tunnel mass dielectric oxide-nitride", 11-International Symposium Silicon Nitride, Dioxide, Dielectrics, 219th Meeting Electrochemical Society, Montreal, Canada, May 1 to May 6, 2011.
 
                Invited Talks:
2.1         H. Watanabe, “Hidden order and edge effect in quantum spin-ladder”, Abstracts of the meeting of the Physical society of Japan, Sectional meeting, vol. 1995, No.3 (19950912) pp.205-206, 1995 (in Japanese).
2.2         H. Watanabe, K. Matsuzawa, “New BGN model in device simulation --- Calculation method of non-equilibrium BGN ---”, Abstract of the 48 annual meeting of Japan society of applied physics, Tokyo, 2001, p. 35.
2.3         H. Watanabe, K. Matsuzawa, S. Takagi, “3D device simulation of direct tunneling current -- Gate width dependence of SOI-nMOSFET”, Abstract of the 49 annual meeting of Japan society of applied physics, Kanagawa, 2002, p. 52.
2.4         K. Uchida, H. Watanabe, J. Koga, A. Kinoshita, S. Takagi, “Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs”, Proc. simulation of semiconductor process and devices, 2003, pp. 8-13.
2.5         H. Watanabe, “Statistics of grain boundaries in poly-Si of nMOSFETs”, Abstract of the 50 annual meeting of Japan society of applied physics, Kanagawa, 2003, p. 67.
2.6         H. Watanabe, “Depletion approximation of gate poly-Si”, the 51-th annual meeting of Japan society of applied physics, 29p-B-6, Tokyo, 2004.
2.7         H. Watanabe, D. Matsushita, K. Muraoka, “Impact of poly-Si interfacial transition layer on tunnel mass”, The 52-th annual meeting of Japan society of applied physics, 29p-zd-2, Saitama, 2005.
2.8         H. Watanabe, K. Matsuo, T. Kobayashi, T. Saito, K. Nakajima, “Weak accumulation of gate polysilicon”, the 53-th annual meeting of Japan society of applied physics, 22a-ZA-3, Tokyo, 2006.
2.9         H. Watanabe, D. Matsushita, K. Muraoka, K. Kato, “On CV-JN characteristics of ultra-thin SiON dielectric including dangling-bonds”, The 54th annual meeting of Japan society of applied physics, 27-aSQ-2, Kanagawa, 2007.
2.10      H. Watanabe, “Lectures on advanced devices physics – CMOS related topics”, Invitation of Dr. Hiroshi Watanabe to the department of electrical engineering in national Tsing Hua university for the lecture on 11/5(Mon), 2007, from 16:00-19:00 @ Electrical Engineering & Computer Science building 410 room. (Coordinator: Prof. R. Shirota)
2.11      H. Watanabe, “Modeling of relation between atomistic dangling-bond and electrical measurement in gate dielectric”, Dec. 17, 2007, University of Modena, Italy. (Coordinator: Prof. R. Brunetti)
2.12      H. Watanabe, “Modeling of relation between atomistic dangling-bond and electrical measurement in gate dielectric”, Dec. 18, 2007, Politecnico di Milano, Italy. (Coordinator: Prof. D. Ielmini)
2.13      H. Watanabe, “Modeling of relation between atomistic dangling-bond and electrical measurement in gate dielectric”, Dec. 19, 2007, University of Bologna, Italy. (Coordinator: Prof. M. Rudan)
2.14      H. Watanabe, “Single electron device simulation”, The 55-th annual meeting of Japan society of applied physics, March, 2008, Chiba
2.15      H. Watanabe, “Interfacial Transition Layer & Tunnel Mass”, National Taiwan University, June 3, 2008, Taipei, Taiwan (Coordinator: Prof. C. W. Lie)
2.16      H. Watanabe, “Digest of the workshop---On requirement for designing advanced electron devices”, June 4, 2008, Taiwan Semiconductor Manufacturing Company, Ltd (TSMC), Tainan, Taiwan (Coordinator: Dr. L. Tran)
2.17      H. Watanabe, “On requirement for designing advanced electron devices”, 2008 Workshop on recent development of Flash Memory and future trend of 32nm and beyond, June 6, 2008, National Chiao Tung University, Hsinchu, Taiwan (Coordinator: Prof. Y. Li)
2.18      H. Watanabe, “Single-electron general-purpose device simulator”, June 10, 2008, SA307, Dept. Appl. Mathematics, National Chiao Tung University, Hsinchu, Taiwan (Coordinator: Prof. M. C. Lai)
2.19      H. Watanabe, “Interfacial transition layer & tunnel mass”, June 10, 2008, Macronix International Co., LTD (MXIC), Hsinchu, Taiwan. (Coordinator: Dr. K. Hsieh)
2.20      H. Watanabe, “Advanced modeling of single-electron devices”, 101-Th meeting of Silicon Technology Division of Applied Physical Society of Japan, June 11, 2008, Tokyo.
2.21      H. Watanabe, “Numerical study of FG-memory cell with a local trap”, The 56-th annual meeting of Japan society of applied physics, March 30, 2009, Tsukuba
2.22      H. Watanabe, “On scaling impact owing to Si-dot boundary”, Feb. 9, 2010, National Nano-Device Laboratory, Hsinchu, Taiwan
2.23      H. Watanabe, K. Kawabata, T. Ichikawa, “On the electronic states of Si-dot surrounded by silicon-oxide”, The 57-th annual meeting of Japan society of applied physics, March 17, 2010, Tokaidai
2.24      H. Watanabe, “A New Simulation Approach to Development of Electron Devices”, May 26, 2010 at PixArt Inc., Hsinchu, Taiwan, (Coordinator: Dr. Y. H. Yang)
2.25      H. Watanabe, “A quasi-virtual design methodology for advanced- & nano- electron devices”, May 27, 2010 at National Center for High-performance Computing, Hsinchu, Taiwan, (Coordinator: Dr. Weicheng Huang)
2.26      H. Watanabe, “快閃記憶體設計與製造技術特論”, NCTU, July 23-24, 2010.
2.27      H. Watanabe, “On Scaling Impact owing to Si-dot Boundaries”, August 24, 2010, Tech. Univ. Denmark, Copenhagen, Denmark (Coordinator: Prof. M. Brandbyge)
2.28      H. Watanabe, “On Scaling Impact owing to Si-dot Boundaries”, ARCES, U. Bologna, Italy, September 10, 2010 (Coordinator: Prof. M. Rudan)
2.29     H. Watanabe, “Advanced Modeling for FG-NVM cell“, Hynix Semiconductor Inc., Icheon, South Korea, December 23, S. W. Park, CTO, Hynix)
2.30     H. Watanabe, “possibility new interface state of surrounded by oxide§, The Asian Consortium Computational Materials Science Working Group Meeting III ACCMSWGM3) on "Advances in the Nano-device Simulation", Jeju Island, Korea during March 31-April 2, 2011.
 
                Invited Paper
3.1         H. Watanabe, “Haldane gap in S=1/2 quantum spin system: The ground state in a quantum spin ladder”, The Physical Society of Japan (JPS), vol. 49, no. 10, pp. 830-833, 1994.
 
                Conference/Meeting (Others)
4.1         H. Watanabe, K. Nomura, S. Takada, “S=1/2 spin ladder and S=1Haldane phase”, Abstracts of the annual meeting of the Physical society of Japan, Annual meeting, vol. 46, No.3 (19910912) p. 419, 1991.
4.2         H. Watanabe, “A cross-over in the lowest excited state of S=1/2 ladder model”, Meeting of Grants-in-Aid for Scientific Research, Strongly correlated quantum mechanical system, August 13, 1993.
4.3         H. Watanabe, “Energy gap of quantum spin ladder”, Abstracts of the meeting of the Physical society of Japan, Annual meeting, vol. 49, No. 3 (19940316) p. 521, 1994.
4.4         H. Watanabe, “Ground state of quantum spin ladder”, Abstract of the meeting of the Physical society of Japan, Sectional meeting, vol. 1994, No.3 (19940816) p.473, 1994.
4.5         H. Watanabe, S. Takagi, “Impact of incomplete ionization of gate impurity and band-gap narrowing on tunnel gate leak of MOS structure”, Abstract of the 47 annual meeting of Japan society of applied physics, Tokyo, 2000, p. 772
4.6         H. Watanabe, S. Takagi, “Effect of incomplete ionization of gate impurity and band-gap narrowing on tunneling current from the gate”, Technical report of IEICE VLD vol. 100 no. 294(20000915), pp. 57-62, VLD2000-66, 2000.
4.7         H. Watanabe, “Advanced modeling of single-electron devices”, Silicon Nanotechnology, VLD-103, Tokyo, July 11, 2008.
4.8         K. Kawabata, T. Ichikawa, H. Watanabe, “Application of tight-binding calculation to optimized Si-SiO2 cluster”, VLD-116, Nov. 13, 2009.
發表日期 專利名稱
2011/06/02 (Approved)H. Watanabe, 5880521, USA, registered date: 19990309, (filed 1995-12-29)' target='_blank'>
(Approved)H. Watanabe, 5880521, USA, registered date: 19990309, (filed 1995-12-29)
2011/06/02 H. Watanabe, P2005033360(Date: 20050209), Japan, JP-Kokai No. P2006221364
2011/06/02 H. Watanabe, A. Kinoshita, A. Takashima, D. Hagishima, P2005086803(Date: 20050324), Japan, JP-Kokai No. P2006269814
2011/06/02

K. Kubo, H. Watanabe, K. Naito, T. Hirai, P2005247759(Date: 20050829), Japan, JP-Kokai No. P2007066356

2011/06/02 H. Watanabe, K. Matsuzawa, R. Shirota, 051119499.9(Date: 20051109), China
2011/06/02 A. Takashima, H. Watanabe, T. Shimizu, T. Yamaguchi, P2005357905(Date: 20051212), Japan, JP-Kokai No. P2007165468
2011/06/02 (Approved)H. Watanabe, “Time-switch carrying removable storage and semiconductor integrated circuit”, (Date: Oct. 12, 2010), US7813206B2, filed Aug. 27, 2007, Appl.: 11845451.
2011/06/02 (Approved) A. Kinoshita, R. Shirota, H. Watanabe, K. Murooka, J. Koga, “Nonvolatile semiconductor memory devices and fabricationthereof”, Date: Oct. 1, 2010, P4599310, P2006024884 (Date: 20060201), Japan, JP-Kokai No. P2007207993

2011/06/02 (Approved) H. Watanabe, F. Arai, “Fabrication method of nonvolatile semiconductor memory devices”,Date: Sept. 24, 2010, P4594921, P2006340201 (Date: 20061218), Japan, JP-Kokai No. P2008153451.
2011/06/02 (Approved) H. Watanabe, “Semiconductor time switchsuitablefor embeddingin NAND flash memorydevice”, US7795666B2, (Date: Sept. 14, 2010). FiledSept. 18, 2008. Appl. No. 12/233168.
2011/06/02 (Approved) H. Watanabe,F. Arai, “Non-volatile semiconductor storage device and manufacturing method thereof”, (Date: Aug. 17, 2010), US7777227B2, filed Aug. 7, 2007, Appl. 11/834886.
2011/06/02 (Approved) A. Kinoshita, H. Watanabe, F. Arai, “Nonvolatilesemiconductor memorydeviceand methodformanufacturingthesame”, (Date: Aug. 17, 2010), US7777270B2, filed Aug. 8, 2007, appl. No. 11/835694.
2011/06/02 (Approved) H. Watanabe, A. Kinoshita, “Electronic timer and system LSI”, (Date: Aug. 10, 2010), US7774162B2, filed Jan. 16, 2008, Appl. 12/015147.
2011/06/02 (Approved) T. Hirai, K. Naito, K. Kubo, Y. Motoi, H. Watanabe, “Memory devices for saving information”, Date: June 25, 2010, P4537909, P2005229740 (Date: 20050808), Japan, JP-Kokai No. P2007048347
2011/06/02 (Approved) F. Arai, T. Enda, K. Tanimoto, N. Kusunoki, N. Aoki, R. Shirota, H. Watanabe, T. Ishihara, P2005359072(Date: 20051213), Japan, JP-Kokai No. P2007165543
2011/06/02 (Approved) H. Watanabe, Y. Nishi, A. Kinoshita, P2006087783(Date: 20060328), Japan, JP-Kokai No. P2007266209
2011/06/02 (Approved) Y. Tomoeda, H. Watanabe, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Miyake, 11411899(Date: 20060427), USA
2011/06/02

(Approved) K. Kubo, H. Watanabe, K. Naito, T. Hirai, 11495591(Date: 20060731), USA

2011/06/02 (Approved) T. Hirai, K. Naito, K. Kubo, Y. Motoi, H. Watanabe, 061109186.X(Date: 20060807), China
2011/06/02 (Approved) H. Watanabe, P2005077092, Kokai P2006257752(Date: 20060922), Japan
2011/06/02 (Approved) H. Watanabe, D. Hagishima, 11538631(Date: 20061004), USA
2011/06/02 (Approved) H. Watanabe, P2006301351(Date: 20061107), Japan, JP-Kokai No. P2008118007
2011/06/02 (Approved) H. Watanabe, P2006327640(Date: 20061204), Japan, JP-Kokai No. P2007165877
2011/06/02 (Approved) H. Watanabe, P2006327641(Date: 20061204), Japan, JP-Kokai No.P2007150322
2011/06/02 (Approved)  H. Watanabe, D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, P2007014008(Date: 20070124), Japan, JP-Kokai No. P2008182035
2011/06/02 (Approved) H. Watanabe, T. Tanaka, P2007020016(Date: 20070130), Japan,JP-Kokai No.P2008186528
2011/06/02 (Approved) A. Kinoshita, R. Shirota, H. Watanabe, K. Murooka, J. Koga, 071007976.1(Date: 20070201), China
2011/06/02 (Approved) H. Watanabe, Y. Nishi, A. Kinoshita, 11723335(Date: 20070319), USA
2011/06/02 (Approved) S. Takagi, S. Kinoshita, H. Watanabe, T. Yaegashi, P2007084989(Date: 20070328), Japan, JP-Kokai No. P2008244297
2011/06/02 (Approved) H. Watanabe, P2007170111(Date: 20070628), Japan, JP-Kokai No. P2009009359
2011/06/02 (Approved) H. Watanabe, 11774891(Date: 20070709), USA
2011/06/02 (Approved) H. Watanabe, A. Nishiyama, P2007186344(Date: 20070717), Japan, JP-Kokai No.P2008103675
2011/06/02 (Approved) H. Watanabe, 07253116.3(Date: 20070809), German
2011/06/02 (Approved) H. Watanabe, 07253116.3(Date: 20070809), Great Britain
2011/06/02 (Approved) H. Watanabe, 07253116.3(Date: 20070809), France
2011/06/02 (Approved)H. Watanabe, 07253116.3(Date: 20070809), EPO
2011/06/02 (Approved) H. Watanabe, 2007-0081791(Date: 20070814), KOR
2011/06/02 (Approved) H. Watanabe, 11839156(Date: 20070815), USA
2011/06/02 (Approved) H. Watanabe, 071141064.3(Date: 20070816), China, Pub. No: 101127367(2008.02.20)
2011/01/04

H. Watanabe, P2002198144 (Date: 20020708), Japan

2011/01/04 (Approved)H. Watanabe, K. Uchida, H. Ito, 6252272, USA, registered date: 20010626' target='_blank'>
(Approved)H. Watanabe, K. Uchida, H. Ito, 6252272, USA, registered date: 20010626
2011/01/04
H. Watanabe, P2001087675 (Date: 20010326), Japan, JP-Kokai No. P2002288205
2011/01/04 (Approved)H. Watanabe, T. Tanzawa, N. Yasuda, T. Tanaka, A. Toriumi, 6320220, USA, registered date: 20011120' target='_blank'>
(Approved)H. Watanabe, T. Tanzawa, N. Yasuda, T. Tanaka, A. Toriumi, 6320220, USA, registered date: 20011120
2010/12/28 , China' target='_blank'>A. Kinoshita, R. Shirota, H. Watanabe, K. Murooka, J. Koga, 081178672.6 (Date: 20081127), China
2010/12/28 (Approved) H. Watanabe, A. Kinoshita, D. Hagishima, A. Takashima, Z061068044.3, China, registered 20090211' target='_blank'>
(Approved) H. Watanabe, A. Kinoshita, D. Hagishima, A. Takashima, Z061068044.3, China, registered 20090211
2010/12/28 (Approved) H. Watanabe, P4250642, Japan, registered date: 20090123' target='_blank'>
(Approved) H. Watanabe, P4250642, Japan, registered date: 20090123
2010/12/28
H. Watanabe, K. Matsuzawa, 20090015074 (Date: 20090115), USA
2010/12/28
H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 08160605.5 (Date: 20080717), EPO
2010/12/28
(Approved)H. Watanabe, K. Matsuzawa, R. Shirota, 1381159, France, registered date: 20080820
2010/12/28 (Approved)F. Arai, T. Enda, H. Tanimoto, N. Kusunoki, N. Aoki, R. Shirota, H. Watanabe, T. Ishihara, 7393748, USA, registered 20080701' target='_blank'>
(Approved)F. Arai, T. Enda, H. Tanimoto, N. Kusunoki, N. Aoki, R. Shirota, H. Watanabe, T. Ishihara, 7393748, USA, registered 20080701
2010/12/28
(Approved) H. Watanabe, K. Matsuzawa, R. Shirota, 1564887, EPO, registered date: 20080903
2010/12/28 (Approved)H. Watanabe, T. Tanzawa, N. Yasuda, T. Tanaka, A. Toriumi, 6111288, USA, registered date: 20000829' target='_blank'>
(Approved)H. Watanabe, T. Tanzawa, N. Yasuda, T. Tanaka, A. Toriumi, 6111288, USA, registered date: 20000829
2010/12/28
H. Watanabe, P2000267574 (Date: 20000904), Japan, JP-Kokai No. P2002076338
2010/12/28
T. Ichikawa, H. Watanabe, K. Kawabata, (Date: 20090921), US2010/0214840, USA
2010/12/28
H. Watanabe, 20090218613 (Date: 20090903), USA
2010/12/28 T. Ichikawa, H. Watanabe, K. Kawabata, P2009-42548 (Date: 20090205), Japan
2010/12/20 H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 12173535 (Date: 20080725), USA
2010/12/20
H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 081137968.3 (Date: 20080717), China
2010/12/20
(Approved)H. Watanabe, K. Matsuzawa, R. Shirota, 1381159, German, registered date: 20080820
2010/12/20
(Approved)H. Watanabe, K. Matsuzawa, R. Shirota, 1381159, EPO, registered date: 20080820
2010/12/20 (Approved)H. Watanabe, P4144853, Japan, registered date: 20080627' target='_blank'>
(Approved)H. Watanabe, P4144853, Japan, registered date: 20080627
2010/12/20 (Approved)H. Watanabe, Z051107175.3, China, registered date: 20080514' target='_blank'>
(Approved)H. Watanabe, Z051107175.3, China, registered date: 20080514
2010/12/20 (Approved)H. Watanabe, P4088195, Japan, registered date: 20080229' target='_blank'>
(Approved)H. Watanabe, P4088195, Japan, registered date: 20080229
2010/12/20 (Approved)H. Miyake, H. Tomoeda, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Watanabe, P4073346, Japan, registered date: 20080201' target='_blank'>
(Approved)H. Miyake, H. Tomoeda, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Watanabe, P4073346, Japan, registered date: 20080201
2010/12/20 (Approved)H. Watanabe, A. Kinoshita, D. Hagishima, A. Takahashi, 789026, Korea, registered 20071218' target='_blank'>(Approved)H. Watanabe, A. Kinoshita, D. Hagishima, A. Takahashi, 789026, Korea, registered 20071218
2010/12/20 H. Watanabe, K. Matsuzawa, R. Shirota, 7248034, USA, registered date: 20070724
2010/12/20
H. Watanabe, A. Kinoshita, 12015147 (Date: 20080116), USA
2010/12/20
H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 08160605.5 (Date: 20080717), GER
2010/12/20
H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 08160605.5 (Date: 20080717), GBR
2010/12/20
 H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 08160605.5 (Date: 20080717), FRA
2010/12/20
 H. Watanabe, A. Kinoshita, S. Kobayashi, D. Hagishima, 2008-0068912 (Date: 20080716), Korea
2010/12/20
 H. Watanabe, K. Matsuzawa, 081135745.3 (Date: 20080711), China
2010/12/20 H. Watanabe, K. Matsuzawa, 2008-0065244 (Date: 20080707), Korea
2010/12/20
 H. Watanabe, 12052198 (Date: 20080320), USA
2010/12/20
 H. Watanabe, K. Matsuzawa, 08152897.8 (Date: 20080318), Germany
2010/12/20  H. Watanabe, K. Matsuzawa, 08152897.8 (Date: 20080318), Great Britain
2010/12/20
H. Watanabe, K. Matsuzawa, 08152897.8 (Date: 20080318), France
2010/12/20 H. Watanabe, K. Matsuzawa, 08152897.8 (Date: 20080318), EPO
2010/12/20
H. Watanabe, K. Matsuzawa, 12049715 (Date: 20080317), USA
2010/12/20
(Approved) H. Watanabe, A. Kinoshita, 7343263, USA, registered date: 20080311
2010/12/20
H. Watanabe, P2008051056 (Date: 20080229), Japan
2010/12/20
 H. Watanabe, M. Mizukami, JP08/053688 (Date: 20080229), Japan
2010/12/20
 H. Watanabe, P2008051056 (Date: 20080229), Japan
2010/12/20
H. Watanabe, M. Mizukami, JP08/053688 (Date: 20080229), Japan
2010/12/20 H. Watanabe, T. Tanaka, 2008-0008599 (Date: 20080128), Korea
2010/12/20 H. Watanabe, D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, 081096687.8 (Date: 20080124), China
2010/12/20
 H. Watanabe, D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, 2008-0007029 (Date: 20080123), Korea
2010/12/20
H. Watanabe, F. Arai, 071161104.0 (Date: 20071218), China
2010/12/20
H. Watanabe, 2007-0112882 (Date: 20071106), Korea
2010/12/20
H. Watanabe, 071169178.9 (Date: 20071107), China
2010/12/20
H. Watanabe, 2007-0123021 (Date: 20071129), Korea
2010/12/20
H. Watanabe, 071306262.0 (Date: 20071130), China
2010/12/20  H. Watanabe, F. Arai, 2007-0132429 (Date: 20071217), Korea
2010/12/20
H. Watanabe, A. Nishiyama, 07116233.3 (Date: 20070912), Great Britain
2010/12/20
 H. Watanabe, A. Nishiyama, 07116233.3 (Date: 20070912), France
2010/12/20
 H. Watanabe, A. Nishiyama, 07116233.3 (Date: 20070912), EPO
2010/12/20
H. Watanabe, T. Tanaka, 071154266.1 (Date: 20070917), China
2010/12/20
D. Hagishima, H. Watanabe, 11856256 (Date: 20070917), USA
2010/12/20 H. Watanabe, D. Matsushita, K. Muraoka, Y. Nakasaki, K. Kato, 11902132 (Date: 20070919), USA
2010/12/20
H. Watanabe, 09385448 (Date: 19990830), USA
2010/12/17 A. Kinoshita, R. Shirota, H. Watanabe, K. Murooka, J. Koga, 081178673.0 (Date: 20081127), China
2010/12/17 A. Kinoshita, R. Shirota, H. Watanabe, K. Murooka, J. Koga, 081178674.5 (Date: 20081127), China
2010/12/17 (Approved) H. Watanabe, 7652317, USA, registered Jan. 26, 2010.' target='_blank'>(Approved) H. Watanabe, 7652317, USA, registered Jan. 26, 2010.
2010/12/17
 A. Kinoshita, D. Hagishima, A. Takashima, H. Watanabe, 12318493, (Date: 20081230), USA
2010/12/17 H. Watanabe, 12233168 (Date: 20080918), USA
2010/12/17
 H. Watanabe, 12262230 (Date: 20081031), USA
2010/12/17
 (Approved) H. Watanabe, Y. Nishi, A. Kinoshita, 854548 (Date: 20080820), Korea
2010/12/17 (Approved) A. Kinoshita, H. Watanabe, F. Arai, P4300228, Japan, registered date: 20090424' target='_blank'>(Approved) A. Kinoshita, H. Watanabe, F. Arai, P4300228, Japan, registered date: 20090424
2010/12/17 (Approved) A. Takashima, H. Watanabe, T. Shimizu, K. Yamauchi, 7518178, USA, registered 20090414' target='_blank'>(Approved) A. Takashima, H. Watanabe, T. Shimizu, K. Yamauchi, 7518178, USA, registered 20090414
2010/12/17 (Approved) D. Hagishima, H. Watanabe, P4282705, Japan, registered date: 20090327' target='_blank'>
(Approved) D. Hagishima, H. Watanabe, P4282705, Japan, registered date: 20090327
2010/12/17 (Approved) H. Watanabe, A. Kinoshita, D. Hagishima, A. Takashima, 7489006, USA, registered date: 20090210' target='_blank'>
(Approved) H. Watanabe, A. Kinoshita, D. Hagishima, A. Takashima, 7489006, USA, registered date: 20090210
2010/12/17 (Approved) H. Watanabe, 7456480, USA, registered date: 20081125' target='_blank'>
(Approved) H. Watanabe, 7456480, USA, registered date: 20081125
2010/12/17 (Approved) H. Watanabe, P4212622, Japan, registered date: 20081107' target='_blank'>
(Approved) H. Watanabe, P4212622, Japan, registered date: 20081107
2010/12/17 (Approved) H. Watanabe, K. Matsuzawa, R. Shirota, 1564887, Germany, registered date: 20080903' target='_blank'>(Approved) H. Watanabe, K. Matsuzawa, R. Shirota, 1564887, Germany, registered date: 20080903
2010/12/17 (Approved) H. Watanabe, K. Matsuzawa, R. Shirota, 1564887, France, registered date: 20080903' target='_blank'>
(Approved) H. Watanabe, K. Matsuzawa, R. Shirota, 1564887, France, registered date: 20080903
2010/12/17 (Approved) H. Watanabe, Y. Nishi, A. Kinoshita, 854547 (Date: 20080820), Korea' target='_blank'>
(Approved) H. Watanabe, Y. Nishi, A. Kinoshita, 854547 (Date: 20080820), Korea
2010/06/10
K. Kojima, K. Umezawa, H. Miyake, T. Matsushita, H. Tomoeda, H. Shimizu, H. Watanabe, P4071658, Japan, registered date: 20080125
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, P4068519, Japan, registered date: 20080118
2010/06/10
H. Watanabe, 772246, Korea, registered date: 20071025
2010/06/10
T. Hirai, K. Naito, K. Kubo, Y. Motoi, H. Watanabe, 7266034, USA, registered date: 20070904
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, 736289, Korea, registered date: 20070629
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, 7224157, USA, registered date: 20070529
2010/06/10
T. Matsuhita, K. Umezawa, H. Miyake, Y. Tomoeda, K. Kojima, H. Shimizu, H. Watanabe, P3958237, Japan, registered date: 20070518
2010/06/10
H. Watanabe, P3959340, Japan, registered: 20070518
2010/06/10
H. Watanabe, K. Matsuzawa, P3955723, Japan, registered date: 20070511
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, 7208933, USA, registered date: 20070424
2010/06/10
K. Umezawa, H. Shimizu, K. Kojima, T. Matsushita, Y. Tomoeda, H. Miyake, H. Watanabe, P3946656, Japan, registered: 20070420
2010/06/10
H. Shimizu, K. Kojima, T. Matsushita, Y. Tomoeda, K. Umezawa, H. Miyake, H. Watanabe, P3929887, Japan, registered date: 20070316
2010/06/10
H. Watanabe, P3930223, Japan, registered date: 20070316
2010/06/10
K. Kojima, K. Umezawa, H. Miyake, T. Matsushita, Y. Tomoeda, H. Shimizu, H. Watanabe, P3929888, Japan, registered date: 20070316
2010/06/10
Y. Tomoeda, H. Watanabe, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Miyake, 7182264, USA, registered: 20070227
2010/06/10
Y. Tomoeda, H. Watanabe, H. Shimizu, K. Kojima, T. Matsuhita, K. Umezawa, H. Miyake, 7182251, USA, registered date: 20070227
2010/06/10
H. Watanabe, D. Matsushita, P3906091, Japan, registered date: 20070119
2010/06/10
Tomoeda, H. Watanabe, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Miyake, 7134600, USA, registered date: 20061114
2010/06/10
H. Shimizu, K. Kojima, T. Matsushita, Y. Tomoeda, K. Umezawa, H. Miyake, H. Watanabe, 7121472, USA, registered date: 20061017
2010/06/10
H. Watanabe, P3863283, Japan, registered date: 20061006
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, ZL03145379.1, China, registered date: 20061004
2010/06/10
H. Watanabe, P3857482, Japan, registered date: 20060922
2010/06/10
H. Watanabe, N. Yasuda, A. Toriumi, T. Tanzawa, T. Tanaka, P3853905, Japan, registered date: 20060915
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, 619656, Korea, registered date: 20060828
2010/06/10 H. Watanabe, P3827983, Japan, registered date: 20060714
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, 7075284, USA, registered date: 20060711
2010/06/10
Y. Tomoeda, H. Watanabe, H. Shimizu, K. Kojima, T. Matsushita, K. Umezawa, H. Miyake, P3822170, Japan, registered date: 20060630
2010/06/10
H. Watanabe, K. Matsuzawa, R. Shirota, I244107, Taiwan, registered date: 20051121
2010/06/10
H. Watanabe, K. Matsuzawa, 6954723, USA, registered date: 20051011
2010/06/10
K. Kojima, K. Umezawa, H. Miyake, Y. Tomoeda, H. Shimizu, H. Watanabe, 6945467, USA, registered date: 20050920
2010/06/10
K. Kojima, K. Umezawa, H. Miyake, T. Matsushita, Y. Tomoeda, H. Shimizu, H. Watanabe, 6811083, USA, registered date: 20041102
2010/06/10
H. Watanabe, H. Ito, K. Uchida, P3421569, Japan, registered date: 20030418
2010/06/10
H. Watanabe, 19600300, Germany, registered date: 20040311
2010/06/10
H. Watanabe, A. Nishiyama, M. Nagamine, S. Takagi, P3417867, Japan, registered date: 20030411
2010/06/10
H. Watanabe, P3351729, Japan, registered date: 20020920
國家 學校名稱 系所 學位 期間
日本 筑波大學 物理系所 博士 1991.04 ~ 1994.03
日本 筑波大學 物理系所 碩士 1989.04 ~ 1991.03
日本 筑波大學 物理系所 學士 1985.04 ~ 1989.03
服務機關名稱 單位 職務 期間
日本東芝公司 研發中心 ULSI Lab. 總公司研究員 1994.01 ~ 2010.01
類別 年度 獎項名稱 頒獎單位
校外榮譽事項 2010 Inventor Evaluation: AA (rank in the top 1% in all area of industries of Japan) Ultra Patent
校外榮譽事項 2009 Who’s who in Science and Engineering 10th Anniversary Who’s who
校外榮譽事項 2008 2008 IEEE/ EDS Golden Report Selections T-ED IEEE/EDS
校外榮譽事項 2007 Research and Development Center Out-Standing Award Toshiba
校外榮譽事項 2007 2007 IEEE/EDS Golden List of Reviewers IEEE/EDS
校外榮譽事項 2005 Jury’s Special Award, MI Awards from Toshiba’s president Toshiba
校外榮譽事項 2004 Research and Development Center Good-Standing Award Toshiba