年度 2006
论文名称 S. S. Lu, C. Meng, Y. S. Lin, and H. Lan, "The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FETs", IEEE transactions on electron devices, Vol. 46, No. 1. Pp. 48-54 NSC 88-2219-E-002-009, 1999年01月
发表日期 2006-02-03